Samwin-Single FETs, MOSFETs-SWN3N80D

Description

Drain to Source Voltage;800V/Gate Charge(Qg);17nC@10V/Number;1 N-channel/Pd - Power Dissipation;20W/Operating Temperature -;-55℃~+150℃/Reverse Transfer Capacitance (Crss@Vds);6.6pF/Current - Continuous Drain(Id);3A/Gate Threshold Voltage (Vgs(th));2.5V/Ciss-Input Capacitance;583pF


800V 3A 20W Through Hole TO-251N

Product form

Drain to Source Voltage;800V/Gate Charge(Qg);17nC@10V/Number;1 N-channel/Pd - Power Dissipation;20W/Operating Temperature -;-55℃~+150℃/Reverse Transfer Capacitance (Crss@Vds);6.6pF/Current - Continuous Drain(Id);3A/Gate Threshold Voltage (Vgs(th));2.5V/Ciss-Input... Read more

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    Description

    Drain to Source Voltage;800V/Gate Charge(Qg);17nC@10V/Number;1 N-channel/Pd - Power Dissipation;20W/Operating Temperature -;-55℃~+150℃/Reverse Transfer Capacitance (Crss@Vds);6.6pF/Current - Continuous Drain(Id);3A/Gate Threshold Voltage (Vgs(th));2.5V/Ciss-Input Capacitance;583pF


    800V 3A 20W Through Hole TO-251N

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