Samwin-Single FETs, MOSFETs-SWNB4N65DA

Description

Drain to Source Voltage;650V/Gate Charge(Qg);13nC@10V/Number;1 N-channel/Pd - Power Dissipation;18.4W/RDS(on);3.35Ω@10V/Operating Temperature -;-55℃~+150℃/Reverse Transfer Capacitance (Crss@Vds);5.4pF/Current - Continuous Drain(Id);4A/Gate Threshold Voltage (Vgs(th));2.5V/Ciss-Input Capacitance;438pF


650V 4A 18.4W Through Hole TO-251

Product form

Drain to Source Voltage;650V/Gate Charge(Qg);13nC@10V/Number;1 N-channel/Pd - Power Dissipation;18.4W/RDS(on);3.35Ω@10V/Operating Temperature -;-55℃~+150℃/Reverse Transfer Capacitance (Crss@Vds);5.4pF/Current - Continuous Drain(Id);4A/Gate Threshold Voltage (Vgs(th));2.5V/Ciss-Input... Read more

$3.54 Excl. VAT

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    Description

    Drain to Source Voltage;650V/Gate Charge(Qg);13nC@10V/Number;1 N-channel/Pd - Power Dissipation;18.4W/RDS(on);3.35Ω@10V/Operating Temperature -;-55℃~+150℃/Reverse Transfer Capacitance (Crss@Vds);5.4pF/Current - Continuous Drain(Id);4A/Gate Threshold Voltage (Vgs(th));2.5V/Ciss-Input Capacitance;438pF


    650V 4A 18.4W Through Hole TO-251

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