Samwin-Single FETs, MOSFETs-SWP050R95E8S

Description

Drain to Source Voltage;100V/Gate Charge(Qg);50nC@10V/Number;1 N-channel/Pd - Power Dissipation;205W/RDS(on);5.9mΩ@10V/Operating Temperature -;-55℃~+150℃/Reverse Transfer Capacitance (Crss@Vds);19pF/Current - Continuous Drain(Id);130A/Gate Threshold Voltage (Vgs(th));4V/Ciss-Input Capacitance;3.415nF


100V 130A 205W Through Hole TO-220

Product form

Drain to Source Voltage;100V/Gate Charge(Qg);50nC@10V/Number;1 N-channel/Pd - Power Dissipation;205W/RDS(on);5.9mΩ@10V/Operating Temperature -;-55℃~+150℃/Reverse Transfer Capacitance (Crss@Vds);19pF/Current - Continuous Drain(Id);130A/Gate Threshold Voltage (Vgs(th));4V/Ciss-Input... Read more

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    Description

    Drain to Source Voltage;100V/Gate Charge(Qg);50nC@10V/Number;1 N-channel/Pd - Power Dissipation;205W/RDS(on);5.9mΩ@10V/Operating Temperature -;-55℃~+150℃/Reverse Transfer Capacitance (Crss@Vds);19pF/Current - Continuous Drain(Id);130A/Gate Threshold Voltage (Vgs(th));4V/Ciss-Input Capacitance;3.415nF


    100V 130A 205W Through Hole TO-220

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