Samwin-Single FETs, MOSFETs-SWP068R68E7T

Description

Drain to Source Voltage;68V/Gate Charge(Qg);78nC@10V/Number;1 N-channel/Pd - Power Dissipation;178.6W/RDS(on);6.8mΩ@10V/Operating Temperature -;-55℃~+150℃/Reverse Transfer Capacitance (Crss@Vds);228pF/Current - Continuous Drain(Id);90A/Gate Threshold Voltage (Vgs(th));2V/Ciss-Input Capacitance;4.06nF


68V 90A 178.6W Through Hole TO-220

Product form

Drain to Source Voltage;68V/Gate Charge(Qg);78nC@10V/Number;1 N-channel/Pd - Power Dissipation;178.6W/RDS(on);6.8mΩ@10V/Operating Temperature -;-55℃~+150℃/Reverse Transfer Capacitance (Crss@Vds);228pF/Current - Continuous Drain(Id);90A/Gate Threshold Voltage (Vgs(th));2V/Ciss-Input... Read more

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    Description

    Drain to Source Voltage;68V/Gate Charge(Qg);78nC@10V/Number;1 N-channel/Pd - Power Dissipation;178.6W/RDS(on);6.8mΩ@10V/Operating Temperature -;-55℃~+150℃/Reverse Transfer Capacitance (Crss@Vds);228pF/Current - Continuous Drain(Id);90A/Gate Threshold Voltage (Vgs(th));2V/Ciss-Input Capacitance;4.06nF


    68V 90A 178.6W Through Hole TO-220

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