Samwin-Single FETs, MOSFETs-SWP10N65D

Description

Drain to Source Voltage;650V/Gate Charge(Qg);35nC@10V/Number;1 N-channel/Pd - Power Dissipation;41.8W/RDS(on);900mΩ@10V/Operating Temperature -;-55℃~+150℃/Reverse Transfer Capacitance (Crss@Vds);14pF/Current - Continuous Drain(Id);10A/Gate Threshold Voltage (Vgs(th));4.5V/Ciss-Input Capacitance;1.45nF


650V 10A 41.8W Through Hole TO-220

Product form

Drain to Source Voltage;650V/Gate Charge(Qg);35nC@10V/Number;1 N-channel/Pd - Power Dissipation;41.8W/RDS(on);900mΩ@10V/Operating Temperature -;-55℃~+150℃/Reverse Transfer Capacitance (Crss@Vds);14pF/Current - Continuous Drain(Id);10A/Gate Threshold Voltage (Vgs(th));4.5V/Ciss-Input... Read more

$1.56 Excl. VAT

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    Description

    Drain to Source Voltage;650V/Gate Charge(Qg);35nC@10V/Number;1 N-channel/Pd - Power Dissipation;41.8W/RDS(on);900mΩ@10V/Operating Temperature -;-55℃~+150℃/Reverse Transfer Capacitance (Crss@Vds);14pF/Current - Continuous Drain(Id);10A/Gate Threshold Voltage (Vgs(th));4.5V/Ciss-Input Capacitance;1.45nF


    650V 10A 41.8W Through Hole TO-220

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