Samwin-Single FETs, MOSFETs-SWY12N65D

Description

Drain to Source Voltage;650V/Gate Charge(Qg);41nC@10V/Number;1 N-channel/Pd - Power Dissipation;34W/RDS(on);660mΩ@10V/Operating Temperature -;-55℃~+150℃/Reverse Transfer Capacitance (Crss@Vds);16pF/Current - Continuous Drain(Id);12A/Gate Threshold Voltage (Vgs(th));2.5V/Ciss-Input Capacitance;1.74nF


650V 12A 34W Through Hole TO-220FT

Product form

Drain to Source Voltage;650V/Gate Charge(Qg);41nC@10V/Number;1 N-channel/Pd - Power Dissipation;34W/RDS(on);660mΩ@10V/Operating Temperature -;-55℃~+150℃/Reverse Transfer Capacitance (Crss@Vds);16pF/Current - Continuous Drain(Id);12A/Gate Threshold Voltage (Vgs(th));2.5V/Ciss-Input... Read more

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    Description

    Drain to Source Voltage;650V/Gate Charge(Qg);41nC@10V/Number;1 N-channel/Pd - Power Dissipation;34W/RDS(on);660mΩ@10V/Operating Temperature -;-55℃~+150℃/Reverse Transfer Capacitance (Crss@Vds);16pF/Current - Continuous Drain(Id);12A/Gate Threshold Voltage (Vgs(th));2.5V/Ciss-Input Capacitance;1.74nF


    650V 12A 34W Through Hole TO-220FT

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