SEP-Single FETs, MOSFETs-CS10N65A2

Description

Drain to Source Voltage;650V/Gate Charge(Qg);32nC@10V/Number;1 N-channel/Type;N-Channel/Pd - Power Dissipation;31W/RDS(on);950mΩ@10V/Reverse Transfer Capacitance (Crss@Vds);11pF/Current - Continuous Drain(Id);10A/Gate Threshold Voltage (Vgs(th));4V/Ciss-Input Capacitance;1.72nF/Output Capacitance(Coss);140pF


N-Channel 650V 10A 31W Through Hole TO-220F

Product form

Drain to Source Voltage;650V/Gate Charge(Qg);32nC@10V/Number;1 N-channel/Type;N-Channel/Pd - Power Dissipation;31W/RDS(on);950mΩ@10V/Reverse Transfer Capacitance (Crss@Vds);11pF/Current - Continuous Drain(Id);10A/Gate Threshold Voltage (Vgs(th));4V/Ciss-Input Capacitance;1.72nF/Output Capacitance(Coss);140pFN-Channel... Read more

$4.68 Excl. VAT

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    Description

    Drain to Source Voltage;650V/Gate Charge(Qg);32nC@10V/Number;1 N-channel/Type;N-Channel/Pd - Power Dissipation;31W/RDS(on);950mΩ@10V/Reverse Transfer Capacitance (Crss@Vds);11pF/Current - Continuous Drain(Id);10A/Gate Threshold Voltage (Vgs(th));4V/Ciss-Input Capacitance;1.72nF/Output Capacitance(Coss);140pF


    N-Channel 650V 10A 31W Through Hole TO-220F

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