Shanghai Prisemi Elec-Single FETs, MOSFETs-PDPM6N20V3

Description

Drain to Source Voltage;20V/Gate Charge(Qg);12nC@4.5V/Number;1 P-Channel/Pd - Power Dissipation;1W/RDS(on);110mΩ@4.5V/Operating Temperature -;-55℃~+150℃/Reverse Transfer Capacitance (Crss@Vds);55pF/Current - Continuous Drain(Id);3A/Gate Threshold Voltage (Vgs(th));400mV/Ciss-Input Capacitance;405pF


P-Channel 20V 3A 1W Surface Mount DFN-6L(2x2)

Product form

Drain to Source Voltage;20V/Gate Charge(Qg);12nC@4.5V/Number;1 P-Channel/Pd - Power Dissipation;1W/RDS(on);110mΩ@4.5V/Operating Temperature -;-55℃~+150℃/Reverse Transfer Capacitance (Crss@Vds);55pF/Current - Continuous Drain(Id);3A/Gate Threshold Voltage (Vgs(th));400mV/Ciss-Input... Read more

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    Description

    Drain to Source Voltage;20V/Gate Charge(Qg);12nC@4.5V/Number;1 P-Channel/Pd - Power Dissipation;1W/RDS(on);110mΩ@4.5V/Operating Temperature -;-55℃~+150℃/Reverse Transfer Capacitance (Crss@Vds);55pF/Current - Continuous Drain(Id);3A/Gate Threshold Voltage (Vgs(th));400mV/Ciss-Input Capacitance;405pF


    P-Channel 20V 3A 1W Surface Mount DFN-6L(2x2)

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