Shanghai Prisemi Elec-Single FETs, MOSFETs-PNMT60V3

Description

Drain to Source Voltage;60V/Gate Charge(Qg);12nC@10V/Number;1 N-channel/Pd - Power Dissipation;1.04W/RDS(on);82mΩ@10V/Operating Temperature -;-55℃~+150℃/Reverse Transfer Capacitance (Crss@Vds);12pF/Current - Continuous Drain(Id);3A/Gate Threshold Voltage (Vgs(th));2V/Ciss-Input Capacitance;350pF/Output Capacitance(Coss);40pF


N-Channel Surface Mount SOT-23

Product form

Drain to Source Voltage;60V/Gate Charge(Qg);12nC@10V/Number;1 N-channel/Pd - Power Dissipation;1.04W/RDS(on);82mΩ@10V/Operating Temperature -;-55℃~+150℃/Reverse Transfer Capacitance (Crss@Vds);12pF/Current - Continuous Drain(Id);3A/Gate Threshold Voltage (Vgs(th));2V/Ciss-Input... Read more

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    Description

    Drain to Source Voltage;60V/Gate Charge(Qg);12nC@10V/Number;1 N-channel/Pd - Power Dissipation;1.04W/RDS(on);82mΩ@10V/Operating Temperature -;-55℃~+150℃/Reverse Transfer Capacitance (Crss@Vds);12pF/Current - Continuous Drain(Id);3A/Gate Threshold Voltage (Vgs(th));2V/Ciss-Input Capacitance;350pF/Output Capacitance(Coss);40pF


    N-Channel Surface Mount SOT-23

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