Shanghai Prisemi Elec-Single FETs, MOSFETs-PNMT6N1B

Description

Drain to Source Voltage;30V/Gate Charge(Qg);500pC@4.5V/Number;1 N-channel/Pd - Power Dissipation;150mW/RDS(on);9Ω@2.5V/Reverse Transfer Capacitance (Crss@Vds);5pF/Current - Continuous Drain(Id);100mA/Gate Threshold Voltage (Vgs(th));1.5V/Ciss-Input Capacitance;40pF/Output Capacitance(Coss);10pF


N-Channel 30V 0.1A 0.15W Surface Mount DFN-6L(2.1x2.1)

Product form

Drain to Source Voltage;30V/Gate Charge(Qg);500pC@4.5V/Number;1 N-channel/Pd - Power Dissipation;150mW/RDS(on);9Ω@2.5V/Reverse Transfer Capacitance (Crss@Vds);5pF/Current - Continuous Drain(Id);100mA/Gate Threshold Voltage (Vgs(th));1.5V/Ciss-Input Capacitance;40pF/Output Capacitance(Coss);10pFN-Channel... Read more

$1.35 Excl. VAT

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    Description

    Drain to Source Voltage;30V/Gate Charge(Qg);500pC@4.5V/Number;1 N-channel/Pd - Power Dissipation;150mW/RDS(on);9Ω@2.5V/Reverse Transfer Capacitance (Crss@Vds);5pF/Current - Continuous Drain(Id);100mA/Gate Threshold Voltage (Vgs(th));1.5V/Ciss-Input Capacitance;40pF/Output Capacitance(Coss);10pF


    N-Channel 30V 0.1A 0.15W Surface Mount DFN-6L(2.1x2.1)

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