Shanghai Prisemi Elec-Single FETs, MOSFETs-PPM6N12V10

Description

Drain to Source Voltage;12V/Gate Charge(Qg);29nC@4.5V/Number;1 P-Channel/Pd - Power Dissipation;2.4W/RDS(on);80mΩ@1.8V/Reverse Transfer Capacitance (Crss@Vds);655pF/Current - Continuous Drain(Id);10A/Gate Threshold Voltage (Vgs(th));1V/Ciss-Input Capacitance;3.405nF/Output Capacitance(Coss);735pF


12V 10A 2.4W Surface Mount DFN2x2-6L

Product form

Drain to Source Voltage;12V/Gate Charge(Qg);29nC@4.5V/Number;1 P-Channel/Pd - Power Dissipation;2.4W/RDS(on);80mΩ@1.8V/Reverse Transfer Capacitance (Crss@Vds);655pF/Current - Continuous Drain(Id);10A/Gate Threshold Voltage (Vgs(th));1V/Ciss-Input Capacitance;3.405nF/Output Capacitance(Coss);735pF12V... Read more

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    Description

    Drain to Source Voltage;12V/Gate Charge(Qg);29nC@4.5V/Number;1 P-Channel/Pd - Power Dissipation;2.4W/RDS(on);80mΩ@1.8V/Reverse Transfer Capacitance (Crss@Vds);655pF/Current - Continuous Drain(Id);10A/Gate Threshold Voltage (Vgs(th));1V/Ciss-Input Capacitance;3.405nF/Output Capacitance(Coss);735pF


    12V 10A 2.4W Surface Mount DFN2x2-6L

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