Shanghai Prisemi Elec-Single FETs, MOSFETs-PPM8PN30V25

Description

Drain to Source Voltage;30V/Gate Charge(Qg);25.8nC@10V/Number;1 P-Channel/Type;P-Channel/Pd - Power Dissipation;35.6W/RDS(on);11mΩ@10V;15mΩ@4.5V/Reverse Transfer Capacitance (Crss@Vds);146pF/Current - Continuous Drain(Id);37A/Gate Threshold Voltage (Vgs(th));1.6V/Ciss-Input Capacitance;1.207nF/Output Capacitance(Coss);170pF


P-Channel Surface Mount PDFN-8L

Product form

Drain to Source Voltage;30V/Gate Charge(Qg);25.8nC@10V/Number;1 P-Channel/Type;P-Channel/Pd - Power Dissipation;35.6W/RDS(on);11mΩ@10V;15mΩ@4.5V/Reverse Transfer Capacitance (Crss@Vds);146pF/Current - Continuous Drain(Id);37A/Gate Threshold Voltage (Vgs(th));1.6V/Ciss-Input Capacitance;1.207nF/Output Capacitance(Coss);170pFP-Channel... Read more

$2.37 Excl. VAT

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    Description

    Drain to Source Voltage;30V/Gate Charge(Qg);25.8nC@10V/Number;1 P-Channel/Type;P-Channel/Pd - Power Dissipation;35.6W/RDS(on);11mΩ@10V;15mΩ@4.5V/Reverse Transfer Capacitance (Crss@Vds);146pF/Current - Continuous Drain(Id);37A/Gate Threshold Voltage (Vgs(th));1.6V/Ciss-Input Capacitance;1.207nF/Output Capacitance(Coss);170pF


    P-Channel Surface Mount PDFN-8L

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