Shanghai Prisemi Elec-Single FETs, MOSFETs-PPMT12V4

Description

Drain to Source Voltage;12V/Number;1 P-Channel/Type;P-Channel/Pd - Power Dissipation;1.3W/Reverse Transfer Capacitance (Crss@Vds);160pF/Current - Continuous Drain(Id);4.3A/Gate Threshold Voltage (Vgs(th));1V/Ciss-Input Capacitance;750pF/Output Capacitance(Coss);230pF


P-Channel 12V 4.3A 1.3W Surface Mount SOT-23

Product form

Drain to Source Voltage;12V/Number;1 P-Channel/Type;P-Channel/Pd - Power Dissipation;1.3W/Reverse Transfer Capacitance (Crss@Vds);160pF/Current - Continuous Drain(Id);4.3A/Gate Threshold Voltage (Vgs(th));1V/Ciss-Input Capacitance;750pF/Output Capacitance(Coss);230pFP-Channel 12V... Read more

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    Description

    Drain to Source Voltage;12V/Number;1 P-Channel/Type;P-Channel/Pd - Power Dissipation;1.3W/Reverse Transfer Capacitance (Crss@Vds);160pF/Current - Continuous Drain(Id);4.3A/Gate Threshold Voltage (Vgs(th));1V/Ciss-Input Capacitance;750pF/Output Capacitance(Coss);230pF


    P-Channel 12V 4.3A 1.3W Surface Mount SOT-23

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