Shanghai Prisemi Elec-Single FETs, MOSFETs-PPMT20V4E

Description

Drain to Source Voltage;20V/Gate Charge(Qg);17nC@4.5V/Number;1 P-Channel/Pd - Power Dissipation;1.4W/RDS(on);37mΩ@4.5V/Reverse Transfer Capacitance (Crss@Vds);155pF/Current - Continuous Drain(Id);4A/Gate Threshold Voltage (Vgs(th));650mV/Ciss-Input Capacitance;1.25nF/Output Capacitance(Coss);200pF


20V 37mΩ@4.5V 1 P-Channel 1.4W SOT-23 Single FETs, MOSFETs RoHS

Product form

Drain to Source Voltage;20V/Gate Charge(Qg);17nC@4.5V/Number;1 P-Channel/Pd - Power Dissipation;1.4W/RDS(on);37mΩ@4.5V/Reverse Transfer Capacitance (Crss@Vds);155pF/Current - Continuous Drain(Id);4A/Gate Threshold Voltage (Vgs(th));650mV/Ciss-Input Capacitance;1.25nF/Output Capacitance(Coss);200pF20V... Read more

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    Description

    Drain to Source Voltage;20V/Gate Charge(Qg);17nC@4.5V/Number;1 P-Channel/Pd - Power Dissipation;1.4W/RDS(on);37mΩ@4.5V/Reverse Transfer Capacitance (Crss@Vds);155pF/Current - Continuous Drain(Id);4A/Gate Threshold Voltage (Vgs(th));650mV/Ciss-Input Capacitance;1.25nF/Output Capacitance(Coss);200pF


    20V 37mΩ@4.5V 1 P-Channel 1.4W SOT-23 Single FETs, MOSFETs RoHS

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