Shanghai Prisemi Elec-Single FETs, MOSFETs-PPMT30V4

Description

Drain to Source Voltage;30V/Number;1 P-Channel/Type;P-Channel/Pd - Power Dissipation;1.2W/RDS(on);60mΩ@10V/Operating Temperature -;-55℃~+150℃/Reverse Transfer Capacitance (Crss@Vds);75pF/Current - Continuous Drain(Id);4.2A/Gate Threshold Voltage (Vgs(th));1.3V/Ciss-Input Capacitance;950pF/Output Capacitance(Coss);110pF


P-Channel 30V 4.2A 1.2W Surface Mount SOT-23

Product form

Drain to Source Voltage;30V/Number;1 P-Channel/Type;P-Channel/Pd - Power Dissipation;1.2W/RDS(on);60mΩ@10V/Operating Temperature -;-55℃~+150℃/Reverse Transfer Capacitance (Crss@Vds);75pF/Current - Continuous Drain(Id);4.2A/Gate Threshold Voltage (Vgs(th));1.3V/Ciss-Input Capacitance;950pF/Output... Read more

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    Description

    Drain to Source Voltage;30V/Number;1 P-Channel/Type;P-Channel/Pd - Power Dissipation;1.2W/RDS(on);60mΩ@10V/Operating Temperature -;-55℃~+150℃/Reverse Transfer Capacitance (Crss@Vds);75pF/Current - Continuous Drain(Id);4.2A/Gate Threshold Voltage (Vgs(th));1.3V/Ciss-Input Capacitance;950pF/Output Capacitance(Coss);110pF


    P-Channel 30V 4.2A 1.2W Surface Mount SOT-23

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