Shenzhen ruichips Semicon-Single FETs, MOSFETs-RU6099S-R

Description

Drain to Source Voltage;60V/Gate Charge(Qg);72nC@10V/Number;1 N-channel/Pd - Power Dissipation;150W/RDS(on);6mΩ@10V/Reverse Transfer Capacitance (Crss@Vds);240pF/Current - Continuous Drain(Id);120A/Gate Threshold Voltage (Vgs(th));4V/Ciss-Input Capacitance;3nF/Output Capacitance(Coss);430pF


N-Channel 60V 120A 150W Surface Mount TO-263

Product form

Drain to Source Voltage;60V/Gate Charge(Qg);72nC@10V/Number;1 N-channel/Pd - Power Dissipation;150W/RDS(on);6mΩ@10V/Reverse Transfer Capacitance (Crss@Vds);240pF/Current - Continuous Drain(Id);120A/Gate Threshold Voltage (Vgs(th));4V/Ciss-Input Capacitance;3nF/Output Capacitance(Coss);430pFN-Channel... Read more

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    Description

    Drain to Source Voltage;60V/Gate Charge(Qg);72nC@10V/Number;1 N-channel/Pd - Power Dissipation;150W/RDS(on);6mΩ@10V/Reverse Transfer Capacitance (Crss@Vds);240pF/Current - Continuous Drain(Id);120A/Gate Threshold Voltage (Vgs(th));4V/Ciss-Input Capacitance;3nF/Output Capacitance(Coss);430pF


    N-Channel 60V 120A 150W Surface Mount TO-263

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