Shenzhen ruichips Semicon-Single FETs, MOSFETs-RU8205G

Description

Drain to Source Voltage;20V/Gate Charge(Qg);10nC@4.5V/Number;2 N-Channel/Pd - Power Dissipation;960mW/RDS(on);21mΩ@4.5V/Operating Temperature -;-55℃~+150℃/Reverse Transfer Capacitance (Crss@Vds);95pF/Current - Continuous Drain(Id);6A/Gate Threshold Voltage (Vgs(th));700mV/Ciss-Input Capacitance;580pF


N-Channel Array 20V 6A 0.96W Surface Mount TSSOP-8

Product form

Drain to Source Voltage;20V/Gate Charge(Qg);10nC@4.5V/Number;2 N-Channel/Pd - Power Dissipation;960mW/RDS(on);21mΩ@4.5V/Operating Temperature -;-55℃~+150℃/Reverse Transfer Capacitance (Crss@Vds);95pF/Current - Continuous Drain(Id);6A/Gate Threshold Voltage (Vgs(th));700mV/Ciss-Input... Read more

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    Description

    Drain to Source Voltage;20V/Gate Charge(Qg);10nC@4.5V/Number;2 N-Channel/Pd - Power Dissipation;960mW/RDS(on);21mΩ@4.5V/Operating Temperature -;-55℃~+150℃/Reverse Transfer Capacitance (Crss@Vds);95pF/Current - Continuous Drain(Id);6A/Gate Threshold Voltage (Vgs(th));700mV/Ciss-Input Capacitance;580pF


    N-Channel Array 20V 6A 0.96W Surface Mount TSSOP-8

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