Shikues-Single FETs, MOSFETs-BSS123

Description

Drain to Source Voltage;100V/Number;1 N-channel/Pd - Power Dissipation;300mW/RDS(on);6Ω@10V/Operating Temperature -;-55℃~+150℃/Reverse Transfer Capacitance (Crss@Vds);6pF/Current - Continuous Drain(Id);29mA/Gate Threshold Voltage (Vgs(th));2V/Ciss-Input Capacitance;60pF


N-Channel 100V 29mA 300mW Surface Mount SOT-23

Product form

Drain to Source Voltage;100V/Number;1 N-channel/Pd - Power Dissipation;300mW/RDS(on);6Ω@10V/Operating Temperature -;-55℃~+150℃/Reverse Transfer Capacitance (Crss@Vds);6pF/Current - Continuous Drain(Id);29mA/Gate Threshold Voltage (Vgs(th));2V/Ciss-Input Capacitance;60pFN-Channel... Read more

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    Description

    Drain to Source Voltage;100V/Number;1 N-channel/Pd - Power Dissipation;300mW/RDS(on);6Ω@10V/Operating Temperature -;-55℃~+150℃/Reverse Transfer Capacitance (Crss@Vds);6pF/Current - Continuous Drain(Id);29mA/Gate Threshold Voltage (Vgs(th));2V/Ciss-Input Capacitance;60pF


    N-Channel 100V 29mA 300mW Surface Mount SOT-23

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