Shikues-Single FETs, MOSFETs-SK07N65B-TF

Description

Drain to Source Voltage;650V/Gate Charge(Qg);20nC@10V/Number;1 N-channel/Pd - Power Dissipation;42W/RDS(on);1.2Ω@10V/Operating Temperature -;-55℃~+150℃/Reverse Transfer Capacitance (Crss@Vds);10pF/Current - Continuous Drain(Id);7A/Gate Threshold Voltage (Vgs(th));2V/Ciss-Input Capacitance;1.12nF


N-Channel 650V 7A 42W Through Hole TO-220F

Product form

Drain to Source Voltage;650V/Gate Charge(Qg);20nC@10V/Number;1 N-channel/Pd - Power Dissipation;42W/RDS(on);1.2Ω@10V/Operating Temperature -;-55℃~+150℃/Reverse Transfer Capacitance (Crss@Vds);10pF/Current - Continuous Drain(Id);7A/Gate Threshold Voltage (Vgs(th));2V/Ciss-Input... Read more

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    Description

    Drain to Source Voltage;650V/Gate Charge(Qg);20nC@10V/Number;1 N-channel/Pd - Power Dissipation;42W/RDS(on);1.2Ω@10V/Operating Temperature -;-55℃~+150℃/Reverse Transfer Capacitance (Crss@Vds);10pF/Current - Continuous Drain(Id);7A/Gate Threshold Voltage (Vgs(th));2V/Ciss-Input Capacitance;1.12nF


    N-Channel 650V 7A 42W Through Hole TO-220F

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