Shikues-Single FETs, MOSFETs-SK10N70B-TF

Description

Drain to Source Voltage;700V/Gate Charge(Qg);40nC@350V/Number;1 N-channel/Pd - Power Dissipation;51W/RDS(on);800mΩ@10V/Operating Temperature -;-55℃~+150℃/Reverse Transfer Capacitance (Crss@Vds);16pF/Current - Continuous Drain(Id);10A/Gate Threshold Voltage (Vgs(th));2V/Ciss-Input Capacitance;1.54nF


N-Channel 700V 10A 51W Through Hole TO-220F

Product form

Drain to Source Voltage;700V/Gate Charge(Qg);40nC@350V/Number;1 N-channel/Pd - Power Dissipation;51W/RDS(on);800mΩ@10V/Operating Temperature -;-55℃~+150℃/Reverse Transfer Capacitance (Crss@Vds);16pF/Current - Continuous Drain(Id);10A/Gate Threshold Voltage (Vgs(th));2V/Ciss-Input... Read more

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    Description

    Drain to Source Voltage;700V/Gate Charge(Qg);40nC@350V/Number;1 N-channel/Pd - Power Dissipation;51W/RDS(on);800mΩ@10V/Operating Temperature -;-55℃~+150℃/Reverse Transfer Capacitance (Crss@Vds);16pF/Current - Continuous Drain(Id);10A/Gate Threshold Voltage (Vgs(th));2V/Ciss-Input Capacitance;1.54nF


    N-Channel 700V 10A 51W Through Hole TO-220F

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