Shikues-Single FETs, MOSFETs-SKQ48N10AD

Description

Drain to Source Voltage;100V/Gate Charge(Qg);13nC@4.5V/Number;1 N-channel/Pd - Power Dissipation;104W/RDS(on);10mΩ@10V/Operating Temperature -;-55℃~+150℃/Reverse Transfer Capacitance (Crss@Vds);7pF/Current - Continuous Drain(Id);48A/Gate Threshold Voltage (Vgs(th));1.7V/Ciss-Input Capacitance;2.02nF


100V 10mΩ@10V 1 N-channel 104W DFN-8L(5x6) Single FETs, MOSFETs RoHS

Product form

Drain to Source Voltage;100V/Gate Charge(Qg);13nC@4.5V/Number;1 N-channel/Pd - Power Dissipation;104W/RDS(on);10mΩ@10V/Operating Temperature -;-55℃~+150℃/Reverse Transfer Capacitance (Crss@Vds);7pF/Current - Continuous Drain(Id);48A/Gate Threshold Voltage (Vgs(th));1.7V/Ciss-Input... Read more

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    Description

    Drain to Source Voltage;100V/Gate Charge(Qg);13nC@4.5V/Number;1 N-channel/Pd - Power Dissipation;104W/RDS(on);10mΩ@10V/Operating Temperature -;-55℃~+150℃/Reverse Transfer Capacitance (Crss@Vds);7pF/Current - Continuous Drain(Id);48A/Gate Threshold Voltage (Vgs(th));1.7V/Ciss-Input Capacitance;2.02nF


    100V 10mΩ@10V 1 N-channel 104W DFN-8L(5x6) Single FETs, MOSFETs RoHS

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