Sichainsemi-Single FETs, MOSFETs-SG1M160120J

Description

Drain to Source Voltage;1.2kV/Gate Charge(Qg);25.4nC/Type;N-Channel/Pd - Power Dissipation;120W/RDS(on);160mΩ@15V/Operating Temperature -;-55℃~+175℃/Reverse Transfer Capacitance (Crss@Vds);1.4pF/Current - Continuous Drain(Id);21A/Gate Threshold Voltage (Vgs(th));2.8V/Ciss-Input Capacitance;617pF


N-Channel 1.2kV 21A 120W Surface Mount TO-263-7L

Product form

Drain to Source Voltage;1.2kV/Gate Charge(Qg);25.4nC/Type;N-Channel/Pd - Power Dissipation;120W/RDS(on);160mΩ@15V/Operating Temperature -;-55℃~+175℃/Reverse Transfer Capacitance (Crss@Vds);1.4pF/Current - Continuous Drain(Id);21A/Gate Threshold Voltage (Vgs(th));2.8V/Ciss-Input Capacitance;617pFN-Channel... Read more

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    Description

    Drain to Source Voltage;1.2kV/Gate Charge(Qg);25.4nC/Type;N-Channel/Pd - Power Dissipation;120W/RDS(on);160mΩ@15V/Operating Temperature -;-55℃~+175℃/Reverse Transfer Capacitance (Crss@Vds);1.4pF/Current - Continuous Drain(Id);21A/Gate Threshold Voltage (Vgs(th));2.8V/Ciss-Input Capacitance;617pF


    N-Channel 1.2kV 21A 120W Surface Mount TO-263-7L

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