Siliup-Single FETs, MOSFETs-SP010N01AGHTO
- Siliup
Drain to Source Voltage;100V/Gate Charge(Qg);218nC@10V/Number;1 N-channel/Type;N-Channel/Pd - Power Dissipation;465W/RDS(on);1.2mΩ@10V/Operating Temperature -;-55℃~+150℃/Reverse Transfer Capacitance (Crss@Vds);353pF/Current - Continuous Drain(Id);430A/Gate Threshold Voltage (Vgs(th));4V/Ciss-Input... Read more
$3.21 Excl. VAT
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