Siliup-Single FETs, MOSFETs-SP010N02AAGHTO
- Siliup
Drain to Source Voltage;100V/Gate Charge(Qg);175nC/Number;1 N-channel/Pd - Power Dissipation;295W/RDS(on);1.9mΩ@10V/Operating Temperature -;-55℃~+150℃/Reverse Transfer Capacitance (Crss@Vds);32pF/Current - Continuous Drain(Id);300A/Gate Threshold Voltage (Vgs(th));4V/Ciss-Input... Read more
$1.98 Excl. VAT
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