Siliup-Single FETs, MOSFETs-SP010N02BGHTF

Description

Drain to Source Voltage;100V/Gate Charge(Qg);158nC@10V/Number;1 N-channel/Type;N-Channel/Pd - Power Dissipation;280W/RDS(on);2mΩ@10V/Operating Temperature -;-55℃~+150℃/Reverse Transfer Capacitance (Crss@Vds);35pF/Current - Continuous Drain(Id);235A/Gate Threshold Voltage (Vgs(th));3.2V/Ciss-Input Capacitance;10.256nF/Output Capacitance(Coss);1.876nF


N-Channel 100V 235A 280W Through Hole TO-247

Product form

Drain to Source Voltage;100V/Gate Charge(Qg);158nC@10V/Number;1 N-channel/Type;N-Channel/Pd - Power Dissipation;280W/RDS(on);2mΩ@10V/Operating Temperature -;-55℃~+150℃/Reverse Transfer Capacitance (Crss@Vds);35pF/Current - Continuous Drain(Id);235A/Gate Threshold Voltage (Vgs(th));3.2V/Ciss-Input... Read more

$3.87 Excl. VAT

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    Description

    Drain to Source Voltage;100V/Gate Charge(Qg);158nC@10V/Number;1 N-channel/Type;N-Channel/Pd - Power Dissipation;280W/RDS(on);2mΩ@10V/Operating Temperature -;-55℃~+150℃/Reverse Transfer Capacitance (Crss@Vds);35pF/Current - Continuous Drain(Id);235A/Gate Threshold Voltage (Vgs(th));3.2V/Ciss-Input Capacitance;10.256nF/Output Capacitance(Coss);1.876nF


    N-Channel 100V 235A 280W Through Hole TO-247

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