Siliup-Single FETs, MOSFETs-SP010N02GHTD
- Siliup
Drain to Source Voltage;100V/Gate Charge(Qg);156nC@10V/Number;1 N-channel/Pd - Power Dissipation;260W/RDS(on);1.9mΩ@10V/Operating Temperature -;-55℃~+150℃/Reverse Transfer Capacitance (Crss@Vds);48pF/Current - Continuous Drain(Id);270A/Gate Threshold Voltage (Vgs(th));2.7V/Ciss-Input... Read more
$3.12 Excl. VAT
-
Guaranteed secure & safe checkout.