Siliup-Single FETs, MOSFETs-SP010N02GHTD

Description

Drain to Source Voltage;100V/Gate Charge(Qg);156nC@10V/Number;1 N-channel/Pd - Power Dissipation;260W/RDS(on);1.9mΩ@10V/Operating Temperature -;-55℃~+150℃/Reverse Transfer Capacitance (Crss@Vds);48pF/Current - Continuous Drain(Id);270A/Gate Threshold Voltage (Vgs(th));2.7V/Ciss-Input Capacitance;13.42nF/Output Capacitance(Coss);2.034nF


100V 270A 260W Surface Mount TO-263

Product form

Drain to Source Voltage;100V/Gate Charge(Qg);156nC@10V/Number;1 N-channel/Pd - Power Dissipation;260W/RDS(on);1.9mΩ@10V/Operating Temperature -;-55℃~+150℃/Reverse Transfer Capacitance (Crss@Vds);48pF/Current - Continuous Drain(Id);270A/Gate Threshold Voltage (Vgs(th));2.7V/Ciss-Input... Read more

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    Description

    Drain to Source Voltage;100V/Gate Charge(Qg);156nC@10V/Number;1 N-channel/Pd - Power Dissipation;260W/RDS(on);1.9mΩ@10V/Operating Temperature -;-55℃~+150℃/Reverse Transfer Capacitance (Crss@Vds);48pF/Current - Continuous Drain(Id);270A/Gate Threshold Voltage (Vgs(th));2.7V/Ciss-Input Capacitance;13.42nF/Output Capacitance(Coss);2.034nF


    100V 270A 260W Surface Mount TO-263

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