Siliup-Single FETs, MOSFETs-SP010N03AGHTQ

Description

Drain to Source Voltage;100V/Gate Charge(Qg);105nC@10V/Number;1 N-channel/Type;N-Channel/Pd - Power Dissipation;280W/RDS(on);3.9mΩ@10V/Operating Temperature -;-55℃~+150℃/Reverse Transfer Capacitance (Crss@Vds);35pF/Current - Continuous Drain(Id);180A/Gate Threshold Voltage (Vgs(th));4V/Ciss-Input Capacitance;7.162nF/Output Capacitance(Coss);1.067nF


100V 3.9mΩ@10V 1 N-channel 280W TO-220-3L Single FETs, MOSFETs RoHS

Product form

Drain to Source Voltage;100V/Gate Charge(Qg);105nC@10V/Number;1 N-channel/Type;N-Channel/Pd - Power Dissipation;280W/RDS(on);3.9mΩ@10V/Operating Temperature -;-55℃~+150℃/Reverse Transfer Capacitance (Crss@Vds);35pF/Current - Continuous Drain(Id);180A/Gate Threshold Voltage (Vgs(th));4V/Ciss-Input... Read more

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    Description

    Drain to Source Voltage;100V/Gate Charge(Qg);105nC@10V/Number;1 N-channel/Type;N-Channel/Pd - Power Dissipation;280W/RDS(on);3.9mΩ@10V/Operating Temperature -;-55℃~+150℃/Reverse Transfer Capacitance (Crss@Vds);35pF/Current - Continuous Drain(Id);180A/Gate Threshold Voltage (Vgs(th));4V/Ciss-Input Capacitance;7.162nF/Output Capacitance(Coss);1.067nF


    100V 3.9mΩ@10V 1 N-channel 280W TO-220-3L Single FETs, MOSFETs RoHS

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