Siliup-Single FETs, MOSFETs-SP010N03BGHTQ

Description

Drain to Source Voltage;100V/Gate Charge(Qg);90nC@10V/Number;1 N-channel/Type;N-Channel/Pd - Power Dissipation;205W/RDS(on);3.3mΩ@10V/Operating Temperature -;-55℃~+150℃/Reverse Transfer Capacitance (Crss@Vds);8.5pF/Current - Continuous Drain(Id);170A/Gate Threshold Voltage (Vgs(th));2.7V/Ciss-Input Capacitance;4.396nF/Output Capacitance(Coss);1.361nF


N-Channel 100V 170A 205W Through Hole TO-220-3L

Product form

Drain to Source Voltage;100V/Gate Charge(Qg);90nC@10V/Number;1 N-channel/Type;N-Channel/Pd - Power Dissipation;205W/RDS(on);3.3mΩ@10V/Operating Temperature -;-55℃~+150℃/Reverse Transfer Capacitance (Crss@Vds);8.5pF/Current - Continuous Drain(Id);170A/Gate Threshold Voltage (Vgs(th));2.7V/Ciss-Input... Read more

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    Description

    Drain to Source Voltage;100V/Gate Charge(Qg);90nC@10V/Number;1 N-channel/Type;N-Channel/Pd - Power Dissipation;205W/RDS(on);3.3mΩ@10V/Operating Temperature -;-55℃~+150℃/Reverse Transfer Capacitance (Crss@Vds);8.5pF/Current - Continuous Drain(Id);170A/Gate Threshold Voltage (Vgs(th));2.7V/Ciss-Input Capacitance;4.396nF/Output Capacitance(Coss);1.361nF


    N-Channel 100V 170A 205W Through Hole TO-220-3L

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