Siliup-Single FETs, MOSFETs-SP010P09GHTO

Description

Drain to Source Voltage;100V/Gate Charge(Qg);168nC@10V/Number;1 P-Channel/Type;P-Channel/Pd - Power Dissipation;290W/RDS(on);9mΩ@10V/Operating Temperature -;-55℃~+150℃/Reverse Transfer Capacitance (Crss@Vds);26pF/Current - Continuous Drain(Id);150A/Gate Threshold Voltage (Vgs(th));4V/Ciss-Input Capacitance;13.6nF/Output Capacitance(Coss);1.2nF


P-Channel 100V 150A 290W Surface Mount TOLL

Product form

Drain to Source Voltage;100V/Gate Charge(Qg);168nC@10V/Number;1 P-Channel/Type;P-Channel/Pd - Power Dissipation;290W/RDS(on);9mΩ@10V/Operating Temperature -;-55℃~+150℃/Reverse Transfer Capacitance (Crss@Vds);26pF/Current - Continuous Drain(Id);150A/Gate Threshold Voltage (Vgs(th));4V/Ciss-Input... Read more

$4.80 Excl. VAT

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    Description

    Drain to Source Voltage;100V/Gate Charge(Qg);168nC@10V/Number;1 P-Channel/Type;P-Channel/Pd - Power Dissipation;290W/RDS(on);9mΩ@10V/Operating Temperature -;-55℃~+150℃/Reverse Transfer Capacitance (Crss@Vds);26pF/Current - Continuous Drain(Id);150A/Gate Threshold Voltage (Vgs(th));4V/Ciss-Input Capacitance;13.6nF/Output Capacitance(Coss);1.2nF


    P-Channel 100V 150A 290W Surface Mount TOLL

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