Siliup-Single FETs, MOSFETs-SP011N02AGHTO
- Siliup
Drain to Source Voltage;110V/Gate Charge(Qg);198nC@10V/Number;1 N-channel/Pd - Power Dissipation;320W/RDS(on);1.6mΩ@10V/Operating Temperature -;-55℃~+150℃/Reverse Transfer Capacitance (Crss@Vds);33pF/Current - Continuous Drain(Id);340A/Gate Threshold Voltage (Vgs(th));3V/Ciss-Input... Read more
$2.79 Excl. VAT
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