Siliup-Single FETs, MOSFETs-SP011N03GHTD
- Siliup
Drain to Source Voltage;110V/Gate Charge(Qg);105nC@0V/Number;1 N-channel/Pd - Power Dissipation;195W/RDS(on);3.6mΩ@10V/Operating Temperature -;-55℃~+150℃/Reverse Transfer Capacitance (Crss@Vds);35pF/Current - Continuous Drain(Id);180A/Gate Threshold Voltage (Vgs(th));4V/Ciss-Input... Read more
$1.35 Excl. VAT
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