Siliup-Single FETs, MOSFETs-SP012N02AGHTO
- Siliup
Drain to Source Voltage;120V/Gate Charge(Qg);213nC@10V/Number;1 N-channel/Type;N-Channel/Pd - Power Dissipation;320W/RDS(on);2.5mΩ@10V/Operating Temperature -;-55℃~+150℃/Reverse Transfer Capacitance (Crss@Vds);48pF/Current - Continuous Drain(Id);300A/Gate Threshold Voltage (Vgs(th));4.5V/Ciss-Input... Read more
$3.24 Excl. VAT
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