Siliup-Single FETs, MOSFETs-SP015N05GHTF

Description

Drain to Source Voltage;150V/Gate Charge(Qg);78nC@10V/Number;1 N-channel/Pd - Power Dissipation;335W/RDS(on);5.2mΩ@10V/Operating Temperature -;-55℃~+150℃/Reverse Transfer Capacitance (Crss@Vds);26pF/Current - Continuous Drain(Id);185A/Gate Threshold Voltage (Vgs(th));3V/Ciss-Input Capacitance;5.45nF/Output Capacitance(Coss);690pF


150V 5.2mΩ@10V 1 N-channel 335W TO-247 Single FETs, MOSFETs RoHS

Product form

Drain to Source Voltage;150V/Gate Charge(Qg);78nC@10V/Number;1 N-channel/Pd - Power Dissipation;335W/RDS(on);5.2mΩ@10V/Operating Temperature -;-55℃~+150℃/Reverse Transfer Capacitance (Crss@Vds);26pF/Current - Continuous Drain(Id);185A/Gate Threshold Voltage (Vgs(th));3V/Ciss-Input... Read more

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    Description

    Drain to Source Voltage;150V/Gate Charge(Qg);78nC@10V/Number;1 N-channel/Pd - Power Dissipation;335W/RDS(on);5.2mΩ@10V/Operating Temperature -;-55℃~+150℃/Reverse Transfer Capacitance (Crss@Vds);26pF/Current - Continuous Drain(Id);185A/Gate Threshold Voltage (Vgs(th));3V/Ciss-Input Capacitance;5.45nF/Output Capacitance(Coss);690pF


    150V 5.2mΩ@10V 1 N-channel 335W TO-247 Single FETs, MOSFETs RoHS

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