Siliup-Single FETs, MOSFETs-SP3011ACNJ

Description

Drain to Source Voltage;30V/Gate Charge(Qg);23.8nC@4.5V;32nC@4.5V/Number;1 N-Channel + 1 P-Channel/Type;N-Channel + P-Channel/Pd - Power Dissipation;23W/RDS(on);9mΩ@10V;10mΩ@4.5V;20mΩ@10V;28mΩ@4.5V/Operating Temperature -;-55℃~+150℃/Reverse Transfer Capacitance (Crss@Vds);131pF;297pF/Current - Continuous Drain(Id);22A;18A/Gate Threshold Voltage (Vgs(th));1.5V/Ciss-Input Capacitance;1.17nF;1.65nF/Output Capacitance(Coss);163pF;367pF


N-Channel+P-Channel 30V 22A 23W Surface Mount PDFNWB-8L(3.3x3.3)

Product form

Drain to Source Voltage;30V/Gate Charge(Qg);23.8nC@4.5V;32nC@4.5V/Number;1 N-Channel + 1 P-Channel/Type;N-Channel + P-Channel/Pd - Power Dissipation;23W/RDS(on);9mΩ@10V;10mΩ@4.5V;20mΩ@10V;28mΩ@4.5V/Operating Temperature -;-55℃~+150℃/Reverse Transfer Capacitance (Crss@Vds);131pF;297pF/Current -... Read more

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    Description

    Drain to Source Voltage;30V/Gate Charge(Qg);23.8nC@4.5V;32nC@4.5V/Number;1 N-Channel + 1 P-Channel/Type;N-Channel + P-Channel/Pd - Power Dissipation;23W/RDS(on);9mΩ@10V;10mΩ@4.5V;20mΩ@10V;28mΩ@4.5V/Operating Temperature -;-55℃~+150℃/Reverse Transfer Capacitance (Crss@Vds);131pF;297pF/Current - Continuous Drain(Id);22A;18A/Gate Threshold Voltage (Vgs(th));1.5V/Ciss-Input Capacitance;1.17nF;1.65nF/Output Capacitance(Coss);163pF;367pF


    N-Channel+P-Channel 30V 22A 23W Surface Mount PDFNWB-8L(3.3x3.3)

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