Siliup-Single FETs, MOSFETs-SP40N01AGHTO
- Siliup
Drain to Source Voltage;40V/Gate Charge(Qg);135.6nC@10V/Number;1 N-channel/Pd - Power Dissipation;300W/RDS(on);0.9mΩ@10V/Operating Temperature -;-55℃~+150℃/Reverse Transfer Capacitance (Crss@Vds);118pF/Current - Continuous Drain(Id);370A/Gate Threshold Voltage (Vgs(th));4V/Ciss-Input... Read more
$1.92 Excl. VAT
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