Siliup-Single FETs, MOSFETs-SP60N01BGHMT

Description

Drain to Source Voltage;60V/Gate Charge(Qg);138nC@10V/Number;1 N-channel/Pd - Power Dissipation;356W/RDS(on);1.2mΩ@10V/Operating Temperature -;-55℃~+150℃/Reverse Transfer Capacitance (Crss@Vds);88pF/Current - Continuous Drain(Id);340A/Gate Threshold Voltage (Vgs(th));3V/Ciss-Input Capacitance;7.82nF/Output Capacitance(Coss);2.17nF


60V 1.2mΩ@10V 1 N-channel 356W STOLL-8L Single FETs, MOSFETs RoHS

Product form

Drain to Source Voltage;60V/Gate Charge(Qg);138nC@10V/Number;1 N-channel/Pd - Power Dissipation;356W/RDS(on);1.2mΩ@10V/Operating Temperature -;-55℃~+150℃/Reverse Transfer Capacitance (Crss@Vds);88pF/Current - Continuous Drain(Id);340A/Gate Threshold Voltage (Vgs(th));3V/Ciss-Input... Read more

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    Description

    Drain to Source Voltage;60V/Gate Charge(Qg);138nC@10V/Number;1 N-channel/Pd - Power Dissipation;356W/RDS(on);1.2mΩ@10V/Operating Temperature -;-55℃~+150℃/Reverse Transfer Capacitance (Crss@Vds);88pF/Current - Continuous Drain(Id);340A/Gate Threshold Voltage (Vgs(th));3V/Ciss-Input Capacitance;7.82nF/Output Capacitance(Coss);2.17nF


    60V 1.2mΩ@10V 1 N-channel 356W STOLL-8L Single FETs, MOSFETs RoHS

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