Siliup-Single FETs, MOSFETs-SP60N01BGMT
- Siliup
Drain to Source Voltage;60V/Gate Charge(Qg);138nC@10V/Number;1 N-channel/Pd - Power Dissipation;360W/RDS(on);1.15mΩ@10V;1.5mΩ@4.5V/Operating Temperature -;-55℃~+150℃/Reverse Transfer Capacitance (Crss@Vds);88pF/Current - Continuous Drain(Id);340A/Gate Threshold Voltage (Vgs(th));1.7V/Ciss-Input... Read more
$2.88 Excl. VAT
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