Siliup-Single FETs, MOSFETs-SP6602CTS

Description

Drain to Source Voltage;30V/Gate Charge(Qg);9nC@4.5V;9nC@10V/Number;1 N-Channel + 1 P-Channel/Type;N-Channel + P-Channel/Pd - Power Dissipation;1.15W/RDS(on);30mΩ@10V;60mΩ@10V/Operating Temperature -;-55℃~+150℃/Reverse Transfer Capacitance (Crss@Vds);53pF;57pF/Current - Continuous Drain(Id);3.5A;2.7A/Gate Threshold Voltage (Vgs(th));1.5V/Ciss-Input Capacitance;420pF;501pF/Output Capacitance(Coss);60pF;72pF


N-Channel+P-Channel 30V 3.5A 1.15W Surface Mount SOT-23-6L

Product form

Drain to Source Voltage;30V/Gate Charge(Qg);9nC@4.5V;9nC@10V/Number;1 N-Channel + 1 P-Channel/Type;N-Channel + P-Channel/Pd - Power Dissipation;1.15W/RDS(on);30mΩ@10V;60mΩ@10V/Operating Temperature -;-55℃~+150℃/Reverse Transfer Capacitance (Crss@Vds);53pF;57pF/Current -... Read more

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    Description

    Drain to Source Voltage;30V/Gate Charge(Qg);9nC@4.5V;9nC@10V/Number;1 N-Channel + 1 P-Channel/Type;N-Channel + P-Channel/Pd - Power Dissipation;1.15W/RDS(on);30mΩ@10V;60mΩ@10V/Operating Temperature -;-55℃~+150℃/Reverse Transfer Capacitance (Crss@Vds);53pF;57pF/Current - Continuous Drain(Id);3.5A;2.7A/Gate Threshold Voltage (Vgs(th));1.5V/Ciss-Input Capacitance;420pF;501pF/Output Capacitance(Coss);60pF;72pF


    N-Channel+P-Channel 30V 3.5A 1.15W Surface Mount SOT-23-6L

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