Siliup-Single FETs, MOSFETs-SP80N03AHTQ

Description

Drain to Source Voltage;80V/Gate Charge(Qg);183nC@10V/Number;1 N-channel/Type;N-Channel/Pd - Power Dissipation;300W/RDS(on);2.9mΩ@10V/Operating Temperature -;-55℃~+150℃/Reverse Transfer Capacitance (Crss@Vds);386pF/Current - Continuous Drain(Id);200A/Gate Threshold Voltage (Vgs(th));3V/Ciss-Input Capacitance;7.61nF/Output Capacitance(Coss);722pF


N-Channel 80V 200A 300W Through Hole TO-220-3L

Product form

Drain to Source Voltage;80V/Gate Charge(Qg);183nC@10V/Number;1 N-channel/Type;N-Channel/Pd - Power Dissipation;300W/RDS(on);2.9mΩ@10V/Operating Temperature -;-55℃~+150℃/Reverse Transfer Capacitance (Crss@Vds);386pF/Current - Continuous Drain(Id);200A/Gate Threshold Voltage (Vgs(th));3V/Ciss-Input... Read more

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    Description

    Drain to Source Voltage;80V/Gate Charge(Qg);183nC@10V/Number;1 N-channel/Type;N-Channel/Pd - Power Dissipation;300W/RDS(on);2.9mΩ@10V/Operating Temperature -;-55℃~+150℃/Reverse Transfer Capacitance (Crss@Vds);386pF/Current - Continuous Drain(Id);200A/Gate Threshold Voltage (Vgs(th));3V/Ciss-Input Capacitance;7.61nF/Output Capacitance(Coss);722pF


    N-Channel 80V 200A 300W Through Hole TO-220-3L

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