Siliup-Single FETs, MOSFETs-SP85N02AGHTD

Description

Drain to Source Voltage;85V/Gate Charge(Qg);143nC@10V/Number;1 N-channel/Type;N-Channel/Pd - Power Dissipation;240W/RDS(on);1.9mΩ@10V/Operating Temperature -;-55℃~+150℃/Reverse Transfer Capacitance (Crss@Vds);190pF/Current - Continuous Drain(Id);260A/Gate Threshold Voltage (Vgs(th));3V/Ciss-Input Capacitance;9.1nF/Output Capacitance(Coss);4.7nF


N-Channel 85V 260A 240W Surface Mount TO-263-3L

Product form

Drain to Source Voltage;85V/Gate Charge(Qg);143nC@10V/Number;1 N-channel/Type;N-Channel/Pd - Power Dissipation;240W/RDS(on);1.9mΩ@10V/Operating Temperature -;-55℃~+150℃/Reverse Transfer Capacitance (Crss@Vds);190pF/Current - Continuous Drain(Id);260A/Gate Threshold Voltage (Vgs(th));3V/Ciss-Input... Read more

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    Description

    Drain to Source Voltage;85V/Gate Charge(Qg);143nC@10V/Number;1 N-channel/Type;N-Channel/Pd - Power Dissipation;240W/RDS(on);1.9mΩ@10V/Operating Temperature -;-55℃~+150℃/Reverse Transfer Capacitance (Crss@Vds);190pF/Current - Continuous Drain(Id);260A/Gate Threshold Voltage (Vgs(th));3V/Ciss-Input Capacitance;9.1nF/Output Capacitance(Coss);4.7nF


    N-Channel 85V 260A 240W Surface Mount TO-263-3L

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