SINO-IC-Single FETs, MOSFETs-SE100130G

Description

Drain to Source Voltage;100V/Gate Charge(Qg);56nC@10V/Number;1 N-channel/Pd - Power Dissipation;285W/RDS(on);4.3mΩ@10V/Operating Temperature -;-55℃~+175℃/Reverse Transfer Capacitance (Crss@Vds);88pF/Current - Continuous Drain(Id);130A/Gate Threshold Voltage (Vgs(th));4V/Ciss-Input Capacitance;3.65nF


N-Channel 100V 130A 285W Surface Mount TO-263

Product form

Drain to Source Voltage;100V/Gate Charge(Qg);56nC@10V/Number;1 N-channel/Pd - Power Dissipation;285W/RDS(on);4.3mΩ@10V/Operating Temperature -;-55℃~+175℃/Reverse Transfer Capacitance (Crss@Vds);88pF/Current - Continuous Drain(Id);130A/Gate Threshold Voltage (Vgs(th));4V/Ciss-Input... Read more

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    Description

    Drain to Source Voltage;100V/Gate Charge(Qg);56nC@10V/Number;1 N-channel/Pd - Power Dissipation;285W/RDS(on);4.3mΩ@10V/Operating Temperature -;-55℃~+175℃/Reverse Transfer Capacitance (Crss@Vds);88pF/Current - Continuous Drain(Id);130A/Gate Threshold Voltage (Vgs(th));4V/Ciss-Input Capacitance;3.65nF


    N-Channel 100V 130A 285W Surface Mount TO-263

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