SINO-IC-Single FETs, MOSFETs-SE150180G

Description

Drain to Source Voltage;150V/Gate Charge(Qg);70nC@10V/Number;1 N-channel/Type;N-Channel/Pd - Power Dissipation;429W/RDS(on);7.2mΩ@10V/Operating Temperature -;-55℃~+175℃/Reverse Transfer Capacitance (Crss@Vds);20pF/Current - Continuous Drain(Id);180A/Gate Threshold Voltage (Vgs(th));4V/Ciss-Input Capacitance;5.977nF/Output Capacitance(Coss);476pF


N-Channel 150V 180A 429W Surface Mount TO-263

Product form

Drain to Source Voltage;150V/Gate Charge(Qg);70nC@10V/Number;1 N-channel/Type;N-Channel/Pd - Power Dissipation;429W/RDS(on);7.2mΩ@10V/Operating Temperature -;-55℃~+175℃/Reverse Transfer Capacitance (Crss@Vds);20pF/Current - Continuous Drain(Id);180A/Gate Threshold Voltage (Vgs(th));4V/Ciss-Input... Read more

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    Description

    Drain to Source Voltage;150V/Gate Charge(Qg);70nC@10V/Number;1 N-channel/Type;N-Channel/Pd - Power Dissipation;429W/RDS(on);7.2mΩ@10V/Operating Temperature -;-55℃~+175℃/Reverse Transfer Capacitance (Crss@Vds);20pF/Current - Continuous Drain(Id);180A/Gate Threshold Voltage (Vgs(th));4V/Ciss-Input Capacitance;5.977nF/Output Capacitance(Coss);476pF


    N-Channel 150V 180A 429W Surface Mount TO-263

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