SINO-IC-Single FETs, MOSFETs-SE200100G

Description

Drain to Source Voltage;200V/Gate Charge(Qg);150.9nC@10V/Number;1 N-channel/Type;N-Channel/Pd - Power Dissipation;400W/RDS(on);13mΩ@10V/Operating Temperature -;-55℃~+175℃/Reverse Transfer Capacitance (Crss@Vds);206pF/Current - Continuous Drain(Id);100A/Gate Threshold Voltage (Vgs(th));4V/Ciss-Input Capacitance;9.382nF


200V 13mΩ@10V 1 N-channel 400W TO-247 Single FETs, MOSFETs RoHS

Product form

Drain to Source Voltage;200V/Gate Charge(Qg);150.9nC@10V/Number;1 N-channel/Type;N-Channel/Pd - Power Dissipation;400W/RDS(on);13mΩ@10V/Operating Temperature -;-55℃~+175℃/Reverse Transfer Capacitance (Crss@Vds);206pF/Current - Continuous Drain(Id);100A/Gate Threshold Voltage (Vgs(th));4V/Ciss-Input... Read more

$45.00 Excl. VAT

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    Description

    Drain to Source Voltage;200V/Gate Charge(Qg);150.9nC@10V/Number;1 N-channel/Type;N-Channel/Pd - Power Dissipation;400W/RDS(on);13mΩ@10V/Operating Temperature -;-55℃~+175℃/Reverse Transfer Capacitance (Crss@Vds);206pF/Current - Continuous Drain(Id);100A/Gate Threshold Voltage (Vgs(th));4V/Ciss-Input Capacitance;9.382nF


    200V 13mΩ@10V 1 N-channel 400W TO-247 Single FETs, MOSFETs RoHS

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