SINO-IC-Single FETs, MOSFETs-SE2101

Description

Drain to Source Voltage;20V/Number;1 P-Channel/Type;P-Channel/Pd - Power Dissipation;250mW/RDS(on);400mΩ@2.5V/Operating Temperature -;-55℃~+150℃/Reverse Transfer Capacitance (Crss@Vds);150pF/Current - Continuous Drain(Id);900mA/Gate Threshold Voltage (Vgs(th));1V/Ciss-Input Capacitance;200pF


P-Channel 20V 0.9A 250mW Surface Mount SOT-23

Product form

Drain to Source Voltage;20V/Number;1 P-Channel/Type;P-Channel/Pd - Power Dissipation;250mW/RDS(on);400mΩ@2.5V/Operating Temperature -;-55℃~+150℃/Reverse Transfer Capacitance (Crss@Vds);150pF/Current - Continuous Drain(Id);900mA/Gate Threshold Voltage (Vgs(th));1V/Ciss-Input Capacitance;200pFP-Channel... Read more

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    Description

    Drain to Source Voltage;20V/Number;1 P-Channel/Type;P-Channel/Pd - Power Dissipation;250mW/RDS(on);400mΩ@2.5V/Operating Temperature -;-55℃~+150℃/Reverse Transfer Capacitance (Crss@Vds);150pF/Current - Continuous Drain(Id);900mA/Gate Threshold Voltage (Vgs(th));1V/Ciss-Input Capacitance;200pF


    P-Channel 20V 0.9A 250mW Surface Mount SOT-23

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