SINO-IC-Single FETs, MOSFETs-SE2102E

Description

Drain to Source Voltage;20V/Gate Charge(Qg);1.4nC@4.5V/Number;1 N-channel/Pd - Power Dissipation;170mW/RDS(on);470mΩ@2.5V/Operating Temperature -;-55℃~+150℃/Reverse Transfer Capacitance (Crss@Vds);15pF/Current - Continuous Drain(Id);600mA/Gate Threshold Voltage (Vgs(th));450mV/Ciss-Input Capacitance;130pF


N-Channel 20V 0.6A 170mW Surface Mount SOT-523

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Drain to Source Voltage;20V/Gate Charge(Qg);1.4nC@4.5V/Number;1 N-channel/Pd - Power Dissipation;170mW/RDS(on);470mΩ@2.5V/Operating Temperature -;-55℃~+150℃/Reverse Transfer Capacitance (Crss@Vds);15pF/Current - Continuous Drain(Id);600mA/Gate Threshold Voltage (Vgs(th));450mV/Ciss-Input... Read more

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    Description

    Drain to Source Voltage;20V/Gate Charge(Qg);1.4nC@4.5V/Number;1 N-channel/Pd - Power Dissipation;170mW/RDS(on);470mΩ@2.5V/Operating Temperature -;-55℃~+150℃/Reverse Transfer Capacitance (Crss@Vds);15pF/Current - Continuous Drain(Id);600mA/Gate Threshold Voltage (Vgs(th));450mV/Ciss-Input Capacitance;130pF


    N-Channel 20V 0.6A 170mW Surface Mount SOT-523

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