SINO-IC-Single FETs, MOSFETs-SE2N7002E

Description

Drain to Source Voltage;60V/Gate Charge(Qg);600pC@10V/Number;1 N-channel/Type;N-Channel/Pd - Power Dissipation;200mW/RDS(on);7Ω@10V/Operating Temperature -;-55℃~+150℃/Reverse Transfer Capacitance (Crss@Vds);3pF/Current - Continuous Drain(Id);200mA/Gate Threshold Voltage (Vgs(th));2.5V/Ciss-Input Capacitance;25pF/Output Capacitance(Coss);8pF


N-Channel 60V 200mA 0.2W Surface Mount SOT-523-3

Product form

Drain to Source Voltage;60V/Gate Charge(Qg);600pC@10V/Number;1 N-channel/Type;N-Channel/Pd - Power Dissipation;200mW/RDS(on);7Ω@10V/Operating Temperature -;-55℃~+150℃/Reverse Transfer Capacitance (Crss@Vds);3pF/Current - Continuous Drain(Id);200mA/Gate Threshold Voltage (Vgs(th));2.5V/Ciss-Input... Read more

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    Description

    Drain to Source Voltage;60V/Gate Charge(Qg);600pC@10V/Number;1 N-channel/Type;N-Channel/Pd - Power Dissipation;200mW/RDS(on);7Ω@10V/Operating Temperature -;-55℃~+150℃/Reverse Transfer Capacitance (Crss@Vds);3pF/Current - Continuous Drain(Id);200mA/Gate Threshold Voltage (Vgs(th));2.5V/Ciss-Input Capacitance;25pF/Output Capacitance(Coss);8pF


    N-Channel 60V 200mA 0.2W Surface Mount SOT-523-3

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