SINO-IC-Single FETs, MOSFETs-SE30P12

Description

Drain to Source Voltage;30V/Gate Charge(Qg);100nC@10V/Number;1 P-Channel/Type;P-Channel/Pd - Power Dissipation;2W/RDS(on);25mΩ@4.5V/Operating Temperature -;-55℃~+150℃/Reverse Transfer Capacitance (Crss@Vds);745pF/Current - Continuous Drain(Id);11A/Gate Threshold Voltage (Vgs(th));3V/Ciss-Input Capacitance;5.27nF/Output Capacitance(Coss);945pF


P-Channel 30V 11A 2W Surface Mount SOP-8

Product form

Drain to Source Voltage;30V/Gate Charge(Qg);100nC@10V/Number;1 P-Channel/Type;P-Channel/Pd - Power Dissipation;2W/RDS(on);25mΩ@4.5V/Operating Temperature -;-55℃~+150℃/Reverse Transfer Capacitance (Crss@Vds);745pF/Current - Continuous Drain(Id);11A/Gate Threshold Voltage (Vgs(th));3V/Ciss-Input... Read more

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    Description

    Drain to Source Voltage;30V/Gate Charge(Qg);100nC@10V/Number;1 P-Channel/Type;P-Channel/Pd - Power Dissipation;2W/RDS(on);25mΩ@4.5V/Operating Temperature -;-55℃~+150℃/Reverse Transfer Capacitance (Crss@Vds);745pF/Current - Continuous Drain(Id);11A/Gate Threshold Voltage (Vgs(th));3V/Ciss-Input Capacitance;5.27nF/Output Capacitance(Coss);945pF


    P-Channel 30V 11A 2W Surface Mount SOP-8

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