SINO-IC-Single FETs, MOSFETs-SE3N150P

Description

Drain to Source Voltage;1.5kV/Number;1 N-channel/Type;N-Channel/Pd - Power Dissipation;63W/RDS(on);7.2Ω@10V/Operating Temperature -;-55℃~+150℃/Reverse Transfer Capacitance (Crss@Vds);15pF/Current - Continuous Drain(Id);3A/Gate Threshold Voltage (Vgs(th));5V/Ciss-Input Capacitance;1.348nF/Output Capacitance(Coss);101pF


N-Channel 1.5kV 3A 63W Through Hole TO-3PF-3

Product form

Drain to Source Voltage;1.5kV/Number;1 N-channel/Type;N-Channel/Pd - Power Dissipation;63W/RDS(on);7.2Ω@10V/Operating Temperature -;-55℃~+150℃/Reverse Transfer Capacitance (Crss@Vds);15pF/Current - Continuous Drain(Id);3A/Gate Threshold Voltage (Vgs(th));5V/Ciss-Input Capacitance;1.348nF/Output... Read more

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    Description

    Drain to Source Voltage;1.5kV/Number;1 N-channel/Type;N-Channel/Pd - Power Dissipation;63W/RDS(on);7.2Ω@10V/Operating Temperature -;-55℃~+150℃/Reverse Transfer Capacitance (Crss@Vds);15pF/Current - Continuous Drain(Id);3A/Gate Threshold Voltage (Vgs(th));5V/Ciss-Input Capacitance;1.348nF/Output Capacitance(Coss);101pF


    N-Channel 1.5kV 3A 63W Through Hole TO-3PF-3

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