SINO-IC-Single FETs, MOSFETs-SE4607

Description

Drain to Source Voltage;20V/Gate Charge(Qg);15.2nC@4.5V/Number;1 N-Channel + 1 P-Channel/Type;N-Channel + P-Channel/Pd - Power Dissipation;1.2W/RDS(on);45mΩ@4.5V/Operating Temperature -;-55℃~+150℃/Reverse Transfer Capacitance (Crss@Vds);52pF/Current - Continuous Drain(Id);4.2A/Gate Threshold Voltage (Vgs(th));1.2V/Ciss-Input Capacitance;450pF/Output Capacitance(Coss);138pF


N-Channel+P-Channel Array 20V 4.2A 1.2W Surface Mount SO-8

Product form

Drain to Source Voltage;20V/Gate Charge(Qg);15.2nC@4.5V/Number;1 N-Channel + 1 P-Channel/Type;N-Channel + P-Channel/Pd - Power Dissipation;1.2W/RDS(on);45mΩ@4.5V/Operating Temperature -;-55℃~+150℃/Reverse Transfer Capacitance (Crss@Vds);52pF/Current -... Read more

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    Description

    Drain to Source Voltage;20V/Gate Charge(Qg);15.2nC@4.5V/Number;1 N-Channel + 1 P-Channel/Type;N-Channel + P-Channel/Pd - Power Dissipation;1.2W/RDS(on);45mΩ@4.5V/Operating Temperature -;-55℃~+150℃/Reverse Transfer Capacitance (Crss@Vds);52pF/Current - Continuous Drain(Id);4.2A/Gate Threshold Voltage (Vgs(th));1.2V/Ciss-Input Capacitance;450pF/Output Capacitance(Coss);138pF


    N-Channel+P-Channel Array 20V 4.2A 1.2W Surface Mount SO-8

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