SINO-IC-Single FETs, MOSFETs-SE6003C

Description

Drain to Source Voltage;60V/Gate Charge(Qg);6nC@4.5V/Number;1 N-channel/Type;N-Channel/Pd - Power Dissipation;1.7W/RDS(on);125mΩ@4.5V/Operating Temperature -;-55℃~+150℃/Reverse Transfer Capacitance (Crss@Vds);19.5pF/Current - Continuous Drain(Id);3A/Gate Threshold Voltage (Vgs(th));2.5V/Ciss-Input Capacitance;247pF


N-Channel 60V 3A 1.7W Through Hole TO-251

Product form

Drain to Source Voltage;60V/Gate Charge(Qg);6nC@4.5V/Number;1 N-channel/Type;N-Channel/Pd - Power Dissipation;1.7W/RDS(on);125mΩ@4.5V/Operating Temperature -;-55℃~+150℃/Reverse Transfer Capacitance (Crss@Vds);19.5pF/Current - Continuous Drain(Id);3A/Gate Threshold Voltage (Vgs(th));2.5V/Ciss-Input... Read more

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    Description

    Drain to Source Voltage;60V/Gate Charge(Qg);6nC@4.5V/Number;1 N-channel/Type;N-Channel/Pd - Power Dissipation;1.7W/RDS(on);125mΩ@4.5V/Operating Temperature -;-55℃~+150℃/Reverse Transfer Capacitance (Crss@Vds);19.5pF/Current - Continuous Drain(Id);3A/Gate Threshold Voltage (Vgs(th));2.5V/Ciss-Input Capacitance;247pF


    N-Channel 60V 3A 1.7W Through Hole TO-251

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